? semiconductor components industries, llc, 2004 september, 2004 ? rev. 6 1 publication order number: mbr150/d mbr150, mbr160 mbr160 is a preferred device axial lead rectifiers the mbr150/160 series employs the schottky barrier principle in a large area metal?to?silicon power diode. state?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheeling diodes, and polarity protection diodes. features ? low reverse current ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction ? these devices are manufactured with a pb?free external lead finish only* mechanical characteristics ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 1000 per bag ? available tape and reeled, 5000 per reel, by adding a arl'' suffix to the part number ? polarity: cathode indicated by polarity band *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. axial lead case 59?10 do?41 plastic schottky barrier rectifiers 1.0 ampere 50, 60 volts preferred devices are recommended choices for future use and best overall value. marking diagram mbr 1x0 mbr1x0 = device code x = 5 or 6 http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
mbr150, mbr160 http://onsemi.com 2 maximum ratings rating symbol mbr150 mbr160 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 60 v rms reverse voltage v r(rms) 35 42 v average rectified forward current (note 1) (v r(equiv) 0.2 v r (dc), t l = 90 c, r ja = 80 c/w, p.c. board mounting, t a = 55 c) i o 1.0 a nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz, t l = 70 c) i fsm 25 (for one cycle) a operating and storage junction temperature range (reverse voltage applied) t j , t stg 65 to +150 c peak operating junction temperature (forward current applied) t j(pk) 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. thermal characteristics (notes 1 and 2) characteristic symbol max unit thermal resistance, junction?to?ambient r ja 80 c/w electrical characteristics (t l = 25 c unless otherwise noted) (note 1) characteristic symbol max unit maximum instantaneous forward voltage (note 2) (i f = 0.1 a) (i f = 1.0 a) (i f = 3.0 a) v f 0.550 0.750 1.000 v maximum instantaneous reverse current @ rated dc voltage (note 2) (t l = 25 c) (t l = 100 c) i r 0.5 5.0 ma 1. lead temperature reference is cathode lead 1/32 from case. 2. pulse test: pulse width = 300 s, duty cycle 2.0%. ordering information device package shipping 2 mbr150 axial lead (pb?free) 1000 units / bag mbr150rl axial lead (pb?free) 5000 / tape & reel mbr160 axial lead (pb?free) 1000 units / bag MBR160RL axial lead (pb?free) 5000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mbr150, mbr160 http://onsemi.com 3 figure 1. typical forward voltage figure 2. typical reverse current* figure 3. forward power dissipation 1.4 v f , instantaneous voltage (volts) 10 1.0 v r , reverse voltage (volts) 40 70 0 0.1 0.05 0.001 i f(av) , average forward current (amps) 1.0 0 4.0 2.0 0 2.0 i f , instantaneous forward current (amps) i p f(av) , average forward 0.1 0.6 0.2 0.4 0.8 1.0 50 60 10 20 30 10 3.0 4.0 5.0 0 1.6 5.0 3.0 1.0 , reverse current (ma) r 0.2 0.5 1.0 0.02 0.01 0.005 0.002 t j = 150 c 100 c 25 c i pk /i av = 20 square wave dc 10 5 t j = 150 c *the curves shown are typical for the highest voltage device in the volt- age grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . 125 c 5.0 2.0 100 c 75 c 25 c power dissipation (watts) 1.2 0.07 0.05 0.03 0.02 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 thermal characteristics figure 4. thermal response r(t), transient thermal resistance (normalized) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 0.07 0.05 0.03 0.02 0.01 0.1 t, time (ms) 0.7 0.5 0.3 0.2 1.0 z jl(t) = z jl ? r(t) p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse. t jl = p pk ? r jl [d + (1 - d) ? r(t 1 + t p ) + r(t p ) - r(t 1 )] where t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from figure 4, i.e.: r(t) = r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p .
mbr150, mbr160 http://onsemi.com 4 figure 5. steady?state thermal resistance figure 6. typical capacitance 3/4 0 l, lead length (inches) 90 80 60 70 50 v r , reverse voltage (volts) 50 80 0 60 40 30 20 r jl , thermal resistance, 40 30 20 3/8 1/8 1/4 1/2 5/8 7/8 1.0 60 70 10 20 30 40 50 70 80 10 100 200 c, capacitance (pf) junction-to-lead ( c/w) both leads to heatsink, equal length maximum typical 100 90 t j = 25 c f = 1 mhz note 1. e mounting data: data shown for thermal resistance junction?to?ambient (r ja) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. typical values for r ja in still air mountin g lead length, l (in) r mo u nting method 1/8 1/4 1/2 3/4 r ja 1 52 65 72 85 c/w 2 67 80 87 100 c/w 3 e 50 c/w note 2. e thermal circuit model: (for heat conduction through the leads) t a(a) t a(k) t l(a) t c(a) t j t c(k) t l(k) p d r s(a) r l(a) r j(a) r j(k) r l(k) r s(k) use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. for a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. terms in the model signify: t a = ambient temperature t c = case temperature t l = lead temperature t j = junction temperature r s = thermal resistance, heatsink?to?ambient r l = thermal resistance, lead?to?heatsink r j = thermal resistance, junction?to?case p d = power dissipation mounting method 1 p.c. board with 1?1/2 x 1?1/2 copper surface. mounting method 3 p.c. board with 1?1/2 x 1?1/2 copper surface. board ground plane vector pin mounting mounting method 2 ll ll l = 3/8 (subscripts a and k refer to anode and cathode sides, respectively.) v alues for thermal resistance components are: r l = 100 c/w/in typically and 120 c/w/in maximum. r j = 36 c/w typically and 46 c/w maximum. note 3. e high frequency operation: since current flow in a schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (see figure 6) rectification efficiency measurements show that operation will be satisfactory up to several megahertz. for example, relative waveform rectification efficiency is approximately 70 percent at 2 mhz, e.g., the ratio of dc power to rms power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. however, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
mbr150, mbr160 http://onsemi.com 5 package dimensions case 59?10 issue s axial lead, do?41 b d k k f f a dim min max min max millimeters inches a 4.10 5.20 0.161 0.205 b 2.00 2.70 0.079 0.106 d 0.71 0.86 0.028 0.034 f --- 1.27 --- 0.050 k 25.40 --- 1.000 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 59-04 obsolete, new standard 59-09. 4. 59-03 obsolete, new standard 59-10. 5. all rules and notes associated with jedec do-41 outline shall apply 6. polarity denoted by cathode band. 7. lead diameter not controlled within f dimension.
mbr150, mbr160 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mbr150/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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